Allied Electronics Data Handbook by N. Cooke

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Sample text

Thin films of metal and polysilicon must satisfy a number of require­ ments before they can be successfully incorporated into a microcircuit fabrication. These requirements are based on the needs to satisfy electrical performance and processibility criteria of a modern VLSI circuit fabrica­ tion. These films must have the highest possible conductivity and the lowest possible contact resistance to active silicon junctions, and should adhere well to silicon, silicon dioxide, and other films that may be em­ ployed in a microelectronic circuit fabrication.

Phys, New York, 1978. 19. P. Sheng, in "Electrical Transport and Optical Properties of Inhomogeneous Media" (J. C. Garland and D. B. ), p. 143. Am. Inst. , New York, 1978. 20. A. Mogro-Campero, J. Appi Phys. 53, 1224 (1982). 21. F. Skaupy, Verh. Dsch. Phys. Ges. 16, 156 (1914). 22. R. V. Penney, /. Phys. Chem. Solids 25, 335 (1964). 23. H. B. Huntington and A. R. Grone, J. Phys. Chem. Solids 20, 76 (1971). 24. F. M. d'Heurle and P. S. Ho, in "Thin Films—Interdiffusion and Reactions" (J. M. Poate, K.

Poate, Phys. Rev. Lett. 50, 492 (1983). 6. M. Missous, E. H. Rhoderick, and K. E. Singer, Electron. Lett. 22, 241 (1986). 7. K. Fuchs, Proc. Cambridge Philos. Soc. 34, 100 (1938). 8. L. I. Maissel and M. H. Francombe, "An Introduction to Thin Films," Gordon & Breach, New York, 1973. 9. K. L. Chopra, "Thin Film Phenomena," McGraw-Hill, New York, 1969. 10. J. J. Thomson, Proc. Cambridge Philos. Soc. I l , 120 (1901). 11. F. H. Sondheimer, Phys. Rev. 80, 401 (1950); Adv. Phys. 1, 1 (1952). 12. M. S.

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