Advanced Electrical and Electronics Engineering: Volume 2 by Yi An Cui, En Ming Xiang (auth.), Jian Lee (eds.)

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By Yi An Cui, En Ming Xiang (auth.), Jian Lee (eds.)

2010 First overseas convention on electric and Electronics Engineering used to be held in Wuhan, China December 4-5. complex electric and Electronics Engineering booklet comprises seventy two revised and prolonged examine articles written through trendy researchers engaging within the convention. themes lined comprise, strength Engineering, Telecommunication, keep watch over engineering, sign processing, Iintegrated circuit, digital amplifier, Nano-technologies, Circuits and networks, Microelectronics, Analog circuits, electronic circuits, Nonlinear circuits, Mixed-mode circuits, Circuits layout, Sensors, CAD instruments, DNA computing, Superconductivity circuits. electric and Electronics Engineering will supply the country of artwork of large advances in electric and Electronics Engineering and likewise function an outstanding reference paintings for researchers and graduate scholars operating with/on electric and Electronics Engineering.

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Extra resources for Advanced Electrical and Electronics Engineering: Volume 2

Example text

System uses a serial EEPROM - 93CS46 to configure PCI9052. The method of using EEPROM to configure PCI9052 will be introduced. FPGA-Based PCI Data Acquisition Synchronization Card 19 1) PCI Configuration Registers: Registers of 00H-0FH in EEPROM are used to configure the PCI configuration registers. Only register of 00H needs to be configured, the others use the default settings. Writing configuration data to EEPROM, it should be attentive that low front, high in the post. For example, we write 0x10B5 to registers of 2H and 3H, 2H = 0xB5, 3H = 0x10.

Its technical parameters are shown in Table 1. The structure of the device is shown in Figure 1 (a). The specific structural parameters as follows, the total epitaxial wafer thickness H is 150 μ m , epitaxial thickness h is 30 μ m + (thickness of N region), the concentration nN + is 5 × 1019 / cm3 (concentration of 9000 × 9000 μ m 2 , P + area is 8600 × 8600μ m 2 , + 9 3 depth of P is 30 μ m , the concentration of P+ region n p + is 5 × 10 / μ m , the + N region), the total area is thickness of N − region W is 90 μm , the concentration of N- region nN − is 1× 1014 / μ m3 , the width of Field Limiting Ring are 15 μ m , 17 μ m and 19 μ m , the rings spacing are 50 μ m , 48 μ m and 46 μ m , respectively.

The current instanours protection is infulenced by short-circuit current instanours value, when setting the relay protection of wind farm, we should consider the short-circuit current of different wind turbine, Current protection II is infulenced by trip time, so we should consider attenuation characteristic of wind generators. 8 (b) three-phase-to-ground fault current of double-fed induction generator Fig. 5. 5km distance k1 and k2 away from the collect circuit 320 and 322, In this case, we operated the wind all generators with maximum active power output.

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